AON2410 30v n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 8a r ds(on) (at v gs = 4.5v) < 21m w r ds(on) (at v gs = 2.5v) < 28m w symbol v ds the AON2410 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g ds dfn 2x2b top view bottom view pin 1 d d g d d s d s pin 1 v gs i dm t j , t stg symbol t 10s steady-state 45 thermal characteristics units maximum junction-to-ambient a parameter typ max i d a t a =70c 2.8 6 pulsed drain current c 32 a continuous drain current g 8 t a =25c v 12 gate-source voltage c/w maximum junction-to-ambient a d 80 w t a =70c 1.8 t a =25c c/w r q ja 37 66 junction and storage temperature range -55 to 150 power dissipation a p d c rev 0 : dec 2011 www.aosmd.com page 1 of 5
AON2410 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.6 1.07 1.5 v i d(on) 32 a 17.1 21 t j =125c 26 32 21.2 28 m w g fs 50 s v sd 0.7 1 v i s 3.5 a c iss 813 pf c oss 98 pf c rss 56 pf r g 2.3 3.5 w q g 8 12 nc q gs 1.2 nc q gd 2.6 nc t d(on) 3 ns t r 3 ns t 26 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =15v, i d =8a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =4.5v, v ds =15v, r l =1.8 w , r =3 w zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =8a forward transconductance diode forward voltage v gs =2.5v, i d =4a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =8a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =12v t d(off) 26 ns t f 3.5 ns t rr 10 ns q rr 2.4 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a, di/dt=100a/ m s turn-off delaytime i f =8a, di/dt=100a/ m s r gen =3 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : dec. 2011 www.aosmd.com page 2 of 5
AON2410 typical electrical and thermal characteristics 17 52 10 0 18 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 0 5 10 15 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =4a v gs =4.5v i d =8a 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 4.5v 10v 2.5v 3v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 15 20 25 30 35 40 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =8a 25 c 125 c rev 0 : dec. 2011 www.aosmd.com page 3 of 5
AON2410 typical electrical and thermal characteristics 17 52 10 0 18 0 1 2 3 4 5 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 40 safe operating area (note f) figure 15: single pulse power rating junction - to - ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =80 c/w rev 0 : dec. 2011 www.aosmd.com page 4 of 5
AON2410 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0 : dec. 2011 www.aosmd.com page 5 of 5
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